The rapid thermal annealing technology (RTP) for wafers is a semiconductor processing technique that heats the wafer to high temperatures (typically between 600 ° C and 1300 ° C) in a short period of time. This process is crucial for optimizing wafer material performance and ensuring that device performance meets the standards required for advanced semiconductor manufacturing processes.

The on state characteristics, blocking characteristics, and operating temperature of IGBT devices are closely related, and the static characteristics of IGBTs with different structures also vary with temperature.

The core architecture of a 1.6T optical module is actually a small system that completes photoelectric conversion.

CP testing (wafer probe testing) is conducted after wafer manufacturing and before packaging, to verify electrical performance and functionality by contacting the bare die on the wafer with probes

The stable operation of low-temperature etching technology relies on a key supporting equipment - the ultra precision temperature control system (cryogenic etch chiller)

CP testing (Circuit probing Test) is a key link in the semiconductor manufacturing process, mainly conducting electrical performance testing on chips at the wafer stage.

Conducting HAST (Highly Accelerated Stress Test) testing during chip development is a crucial step in ensuring the long-term reliability of chips in harsh environments.

Domestic heat flow meters have demonstrated unique advantages in intelligence, automation, and system integration, which can significantly improve testing efficiency and data accuracy.