WAT test structure usually includes all active and passive components of the process platform, such as block resistance, through-hole contact resistance, capacitance resistance, metal wire resistance, MOS transistor, etc. According to the characteristics of CMOS process technology platform, WAT test types can be divided into eight categories: MOS transistor, integrity of gate oxide layer, polysilicon gate field effect transistor (Poly Field Device) and metal 1 field effect transistor (Metal 1 Field Device), N-node (N-node structure) and P-node (P-node structure), metal capacitor (MIM capacitor) and polysilicon capacitor (PIP capacitor) Block resistance Rs (Sheet Resistance), contact resistance Re (Contact Resistance), isolation, etc.

WAT test type

WAT test parameters can be divided into the following eight categories:

① MOS transistors include low-voltage NMOS and PMOS, as well as parameters of Central Asia NMOS and PMOS:

Threshold voltage (Vt), saturation current (Idsat), source-drain breakdown voltage (BVD), leakage current (Ioff), substrate current (Isub)

② Gate Oxide Integrity - GOI parameters:

GOI capacitance (Cgox), GOI breakdown current (BVgox), GOI electrical thickness (Tgox)

③ Parameters of polysilicon gate field effect transistor and the first layer metal gate field effect transistor:

Polycrystalline silicon gate Vt Poly Field, 1st layer metal gate Vt M1 Field

④ Parameters of N-type and P-type knots:

Junction capacitance Cjun, junction breakdown voltage BCjun

⑤ Parameters of block resistance Rs:

N-type polysilicon metal silicide block resistance (Rs NPoly), N-type polysilicon nonmetallic silicide block resistance (Rs Npoly SAB), P-type polysilicon metal silicide block resistance (Rs PPoly), N-type polysilicon nonmetallic silicide block resistance (Rs Ppoly SAB), NW block resistance (Rs NW), PW block resistance (Rs PW), N-type active area metal silicide block resistance (Rs NAA) N-type active area non-metallic silicide block resistance (Rs NAA SAB), P-type active area metallic silicide block resistance (Rs PAA), P-type active area non-metallic silicide block resistance (Rs PAA SAB), metal block resistance (Rs M1, Rs M2 and Rs M3)

⑥ Parameters of contact resistance Re:

N-type polysilicon contact resistance (Rc Npoly), P-type polysilicon contact resistance (Rc PPoly), through-hole contact resistance (Rc VIA1, Rc VIA2 and Rc VIA3), N-type active area contact resistance (Rc NAA), P-type active area contact resistance (Rc PAA)

⑦ Isolated parameters:

N-type polysilicon breakdown voltage (BV Npoly), P-type polysilicon breakdown voltage (BV PPoly), metal breakdown voltage (BV M1, BV M2 and BV M3), N-type active area contact resistance (Rc NAA), P-type active area contact resistance (Rc PAA)

⑧ Parameters of metal capacitance and polysilicon capacitance:

Capacitance CMIM, breakdown voltage BVMIM, capacitance CPIP, breakdown voltage BVPIP