Chip testing is almost inseparable from temperature shock testing, and IGBT chips require countless reliability tests to ensure safe and efficient use. IGBT requires temperature shock testing machines to conduct some environmental reliability tests. Common industrial grade IGBT reliability tests include but are not limited to the following items:

(1) HTRB (High Temperature Reverse Bias) Test: The HTRB test is used to verify the reliability of IGBT leakage indicators under stable conditions. The main focus of HTRB testing is on the edge structure and passivation layer of IGBT chips, as well as ion pollutants related to production. During the HTRB test process, it is generally possible to monitor the variation of leakage current over time.

(2) HTGB (High Temperature Gate Reverse Bias) Test: The HTGB test is used to verify the stability of gate leakage current under electrical and thermal loads. The main focus of the HTGB test assessment is the integrity of the gate oxide layer of IGBT and mobile ion pollution. It is recommended to continuously monitor the leakage current and gate opening voltage of the gate during the experiment. If these two parameters exceed the specified specifications, it is considered that the module will not pass this test.

(3) H3TRB (High Temperature and Humidity Reverse Bias) Test: The H3TRB test is used to test the effect of humidity on the long-term characteristics of power devices. The focus of H3TRB testing is on the passivation layer and chip surface defects of IGBT, including weak links in the entire device structure. It is worth noting that measuring the leakage current immediately after the H3TRB test may result in leakage exceeding the standard. The reason is that most module designs are not fully sealed, and water vapor can also reach the passivation layer over time, leading to leakage exceeding the standard after the test. Therefore, it is possible to bake the device for 2 to 24 hours and restore it to room temperature for 24 hours before testing the leakage current of the device to verify the possibility of water vapor intrusion.

(4) TST (Temperature Shock) Test: The TST test mainly verifies the resistance of IGBT to mechanical stress under passive temperature changes. The focus of TST test assessment is the packaging of IGBT modules and the connection between the substrate and DCB.

(5) TC (Temperature Cycle) Test: TC test is used to simulate the impact of external temperature changes on IGBT and verify the overall structure and materials of devices or modules. In particular, the IGBT power module consists of a system of different materials. When heated and cooled, the coefficient of thermal expansion of different materials varies greatly, and the mechanical stress on the two interfaces during heating or cooling is greater. The focus of the TC test is the connection between the IGBT chip and the DCB, as well as between the DCB and the substrate.

(6) PC (Power Cycle) Test: There are two types of power cycles: second level power cycle (PCsec) and minute level power cycle (PCmin). During the test, the chip is actively heated to the target temperature through its own working current, then the current is turned off and cooled to the specified temperature. The second level power cycle test mainly assesses the reliability of the near chip end connection; The minute level power cycle test mainly assesses the reliability of the connection between the near chip end and the far chip end.

The ThermoTST 580 developed by Zhongleng Cryogenic Technology has a wide temperature range of -80 ℃ to+225 ℃, with a temperature transition of about 10 seconds from -55 ℃ to+125 ℃, which can meet the requirements of IGBT temperature impact testing. At the same time, it can also conduct reliability tests such as characteristic analysis, high and low temperature temperature variation testing, failure analysis, etc., such as chips, microelectronic devices, integrated circuits (SOC, FPGA, PLD, MCU, ADC/DAC, DSP, etc.)Flash, UFS, eMMC, PCBs, MCMs, MEMS, IGBT, sensors, small module components, optical communication (such as transceiver high and low temperature test, SFP optical module high and low temperature test, etc.), other electronic industries, aerospace new materials, laboratory research.

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